~ELECTRONICS~


Part 3

Power consumption of the CMOS inverter

The previous discussion of the CMOS inverter shows why CMOS logic has (almost) no static power dissipation: If the gate voltage is either '1' or '0' there is no conducting path from VCC to GND, and there is no static current through the inverter. In normal operation, the short-circuit condition shown in the applet above arises only during the very short interval, when the gate voltage is switched. Typical switching times for the gate are around 2 ns, and the static current dissipation occurs only during a fraction of this time (while the input voltage is near VCC/2). All other basic CMOS gates have almost no static power dissipation as well.

But there is a dynamic current dissipation in CMOS gates. The applet below illustrates this effect for the CMOS inverter. The gate of a MOS transistor forms a small capacitor. Typical values for the gate capacity are of order Cg = 10 fF. If the input of the inverter is connected to VCC at time t1, this capacitor is charged (Charge Q = Cg * VCC). If the input is connected to GND at time t2 it is discharged. The net effect of this is a very small current of I = dQ/dt = (Cg * VCC)/(t2-t1).

However, due to several reasons the total current drawn by a big CMOS chip, for example a microprocessor, can be quite large:

The total current resulting from the short-circuit currents during switching is difficult to estimate. But the current resulting from switching the input capacitance alone is quite large in the example:
I ~ #gates * (Ctotal*VCC) / dt = (1% * 1.000.000) * (1pF * 3.3V) / 5ns = 6.6 A

On the other hand, the quiescent current in typical static CMOS ICs is very small. For example, an 2K*8 bit CMOS SRAM dissipates only 1 uA when idle.

The next applet illustrates the current dissipation in the CMOS inverter. If the input voltage stays at '1' or '0', either the N-type or the P-type transistor in nonconducting, and there is no current through the inverter.

The power consumption of static CMOS logic is therefore directly proportional to switching frequency. 



 

part 3.1